HUF75329G3, HUF75329P3, HUF75329S3S 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs are manufactured using the innovative UltraFET™ process by Intersil Corporation. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.
The document describes N-Channel Power MOSFETs manufactured using the innovative UltraFET process. These devices are designed for applications requiring high efficiency, such as switching regulators, motor drivers, and power management in portable products.
Key features include a 49A continuous drain current rating, 55V breakdown voltage, and ultra-low on-resistance (Rds(on)) of 0.024 Ohms. The datasheet provides electrical specifications, thermal data, typical performance curves, and PSPICE/SABER models for circuit simulation.
| On-Resistance (Typical) | 0.024 Ohm |
|---|
The typical on-resistance (Rds(on)) is 0.024 Ohms.
The device supports a continuous drain current of 49 A and can withstand a drain-to-source voltage up to 55 V.
The Ultra Low On-Resistance (RDS(on)) is specified as a typical value of 0.024 Ohm.