This document describes the absolute maximum ratings, electrical characteristics, and applications of the KSR1009 NPN Epitaxial Silicon Transistor.
This document provides technical specifications and application information for the KSR1009, an NPN epitaxial silicon transistor designed for switching applications with a built-in bias resistor (R=4.7kΩ). It serves as a complement to the KSR2009 model.
| Collector-Base Voltage (Vcbo) | 40 V |
|---|---|
| Collector-Emitter Voltage (Vceo) | 40 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 100 mA |
| Collector Power Dissipation (Po) | 300 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 ~ 150 °C |
The KSR1009 includes a built-in bias resistor with a value of 4.7 kΩ.
The maximum collector power dissipation is 300 mW.
The maximum junction temperature is 150 °C.