Update: 28 September, 2023
This document describes the features and characteristics of the HUF75639 series N-Channel UltraFET Power MOSFETs by Fairchild Semiconductor Corporation. These MOSFETs are manufactured using the innovative UltraFET® process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. The device can withstand high energy in avalanche mode and has a diode with very low reverse recovery time and stored charge. It is designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Formerly known as developmental type TA75639.
File format: PDF
Size: -
MD5 Checksum: 2A37485B435605B153AAE51BEC2484E7
Publication date: 11 June, 2012
Downloads: -
PDF Link: FAIRCHILD HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3 handbook PDF