This document describes the features and characteristics of the HUF75639 series N-Channel UltraFET Power MOSFETs by Fairchild Semiconductor Corporation. These MOSFETs are manufactured using the innovative UltraFET® process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. The device can withstand high energy in avalanche mode and has a diode with very low reverse recovery time and stored charge. It is designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Formerly known as developmental type TA75639.
This document is a semiconductor data sheet for the HUF75639 series of N-Channel UltraFET Power MOSFETs. The devices feature a 56A continuous drain current rating and a 100V drain-to-source breakdown voltage. They are designed for applications requiring high power efficiency, such as switching regulators, motor drivers, and power management in portable products.
The datasheet provides comprehensive electrical specifications including on-resistance, threshold voltage, and switching times. It also includes typical performance curves, test circuit diagrams, and a PSPICE electrical model for circuit simulation. Available packages include TO-247, TO-220AB, and TO-263AB.
| Turn-Off Time | 70 ns |
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