60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
This document is a datasheet for the Fairchild HUF75332G3, HUF75332P3, and HUF75332S3S N-Channel UltraFET Power MOSFETs. These devices utilize the innovative UltraFET process to achieve the lowest possible on-resistance per silicon area, resulting in outstanding performance for power efficiency applications.
| Drain to Source Voltage | 55 V |
|---|---|
| Continuous Drain Current | 60 A |
| Peak Current | 60 A |
| Power Dissipation | 145 W |
| Thermal Resistance Junction to Case (TO-247) | 1.03 °C/W |
| Thermal Resistance Junction to Ambient (TO-247) | 30 °C/W |
| Turn-On Time | 100 ns |
| Reverse Recovery Time | 75 ns |
| Input Capacitance | 1300 pF |
The maximum continuous drain current is 60 A.
The maximum drain to source voltage is 55 V.