This document describes the features and characteristics of the HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S N-Channel UltraFET Power MOSFETs produced by Fairchild Semiconductor Corporation. It has advantages such as low on-resistance, high energy withstand capability, low reverse recovery time, and stored charge, making it suitable for applications where power efficiency is important.
This document is a data sheet for the HUF75343G3, HUF75343P3, HUF75343S3, and HUF75343S3S N-Channel UltraFET Power MOSFETs. These devices are manufactured using an innovative process to achieve low on-resistance per silicon area, making them suitable for switching regulators, converters, motor drivers, and power management applications.
| Drain Current (Continuous) | 75 A |
|---|---|
| Drain to Source Voltage | 55 V |
| On Resistance (Typical) | 0.009 Ohm |
| Thermal Resistance (Junction-to-Case) | 0.55 C/W |
The device supports a continuous drain current of 75 A.
The device supports a continuous drain current of 75 A.
The maximum drain-to-source voltage is 55 V.
The maximum power dissipation is 270 W.