HUF75645P3, HUF75645S3S 75A, 100V, 0.014 Ohm, N-Channel, UltraFET® Power MOSFETs is a product of Fairchild Semiconductor Corporation. Its features are Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V, and its packaging is JEDEC TO-220AB and JEDEC TO-263AB.
This document is a data sheet for the HUF75645P3 and HUF75645S3S N-Channel UltraFET Power MOSFETs manufactured by Fairchild Semiconductor. The devices feature an ultra-low on-resistance of 0.014 Ohms and are available in JEDEC TO-220AB and TO-263AB packages. They are designed for applications requiring high current handling capabilities up to 75A and 65A respectively, with a drain to source voltage rating of 100V.
| Drain to Source On Resistance | 0.014 Ohm |
|---|---|
| Thermal Resistance Junction to Case | 0.48 OC/W |
| Turn-On Time | 197 ns |
| Total Gate Charge | 238 nC |
The devices are available in JEDEC TO-220AB and TO-263AB packages.
The typical on-resistance is 0.014 Ohms at Vgs = 10V.