This document describes the features and characteristics of Fairchild Semiconductor Corporation's HUF75823D3 and HUF75823D3S models, including ultra-low on-resistance, simulation models, peak current vs pulse width curve, and absolute maximum ratings.
The document is a technical datasheet for the Fairchild HUF75823D3 and HUF75823D3S, which are 14A, 150V N-Channel UltraFET Power MOSFETs available in JEDEC TO-251AA and TO-252AA packages. Key features include ultra-low on-resistance (0.150 Ohm) and temperature-compensated simulation models for PSPICE and SABER.
| Drain Current (Continuous) | 14 A |
|---|---|
| On-Resistance | 0.150 Ohm |
| Thermal Resistance Junction to Case | 1.76 °C/W |
The drain-to-source on resistance is typically 0.125 Ohms at a gate-to-source voltage of 10V.