2SC1251 is an NPN silicon RF power transistor produced by Advanced Semiconductor Inc. It has a maximum current of 300mA, a maximum voltage of 45V, and a maximum power dissipation of 5.3W. The transistor has high linearity and high gain, and is often used in high-linearity Class A amplifiers below 2.0GHz.
The document describes the ASI 2SC1251 as a Common Emitter Device designed for High Linearity Class A Amplifiers operating up to 2.0 GHz. Key features include a direct replacement capability for the NE74020, high gain of at least 10 dB minimum at 1.0 GHz, and gold metalization.
| Frequency Range | up to 2.0 GHz |
|---|---|
| Package Style | 4L STUD |
| Collector Current (Ic) | 300 mA |
| Collector-Emitter Voltage (Vce) | 45 V |
| Power Dissipation (Pdiss) | 5.3W @ Tc = 25 °C |
| Operating Temperature Range | -65 °C to +150 °C |
| Gain (Pras) | 427 dBm @ 1.0 GHz |
The device is designed for use in Class A amplifiers up to a maximum of 2.0 GHz.
The transistor provides a minimum gain of 10 dB when tested at 1.0 GHz.
The maximum power dissipation is rated at 5.3 W when the case temperature is 25 °C.