This datasheet provides the characteristics parameters of ASI HF75-28S, including BVCEO IC, BVCER IC, RBE, BVEBO IE, ICES, VE, IC, hFE, Cob, VCB, GPE, IMD3, IC, VCE, PDISS, TJ, TSTG, θθ, JC, ORDER CODE, DIM, E, F, D, ØC, B, G, H, J, A.
The ASI HF75-28S is an NPN silicon RF power transistor designed for high-frequency applications. It features a minimum gain (PG) of 18 dB at 75 W/30 MHz and an IMD3 of -30 dBc max. at 75 W (PEP). The device is packaged in a .380 stud style and includes an Omnigold™ metalization system for enhanced performance.
Maximum ratings include a collector current of 10 A, collector-to-base voltage of 60 V, and power dissipation of 140 W at 25°C. The transistor operates over a temperature range from -65°C to +200°C.
| Minimum Gain (PG) | 18 dB |
|---|---|
| IMD3 | -30 dBc max. |
| Collector-to-Base Voltage (VCB) | 60 V |
| Collector-Emitter Voltage (VCE) | 35 V |
| Power Dissipation (PDISS) | 140 W @ 25°C |
| Operating Temperature (TJ) | -65°C to +200°C |
| Package Style | .380 stud |
The minimum gain (PG) is 18 dB at 75 W/30 MHz.
The operating temperature range (TJ) is from -65°C to +200°C.