This document is a technical datasheet for the Sanyo 2SJ233, a P-Channel MOS Silicon Field Effect Transistor (FET). It highlights features such as very high-speed switching applications, low ON resistance, and suitability for low-voltage drive. The device has a height onboard of 9.5mm and meets radial taping standards.
| Allowable Power Dissipation (Pp) | 71.2 W |
|---|---|
| Storage Temperature (Tstg) | -55 to +150 °C |
Its height onboard is exactly 9.5 millimeters.
The component can be stored between -55 and +150 degrees Celsius.