This document is a technical datasheet for the SANYO 2SJ264, a P-Channel MOS Silicon Field Effect Transistor (FET) designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and a micaless package that facilitates easy mounting.
| Drain-to-Source Voltage (Vpss) | -60 V |
|---|---|
| Gate-to-Source Voltage (Voss) | +20 V |
| Drain Current (DC) (Ip) | -8 A |
| Allowable Power Dissipation (Pp) | 2.0 W |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
| Package Type | TO-220ML |
The absolute maximum rating for allowable power dissipation is 2.0 W.