This document is a technical datasheet for the SANYO 2SJ227, a P-Channel MOS Silicon Field Effect Transistor (FET) designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and a compact height of 9.5mm suitable for radial taping.
| Drain to Source Voltage (Voss) | -30 V |
|---|---|
| Gate to Source Voltage (Vass) | +15 V |
| Drain Current (DC) (Ip) | -3 A |
| Channel Temperature (Teh) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
The component has a stated onboard height of 9.5mm.
The device allows for 15 W of power dissipation when the ambient temperature is 25°C.