This document is a technical datasheet for the SANYO 2SJ230, a P-Channel MOS Silicon Field Effect Transistor (FET) designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive requirements, and a compact height of 9.5mm.
| Drain to Source Voltage (Voss) | -60 V |
|---|---|
| Gate to Source Voltage (Vass) | #15 v |
| Drain Current (DC) (Ip) | -2.5 A |
| Allowable Power Dissipation (Pp) | 1.5 Ww |
| Channel Temperature (Teh) | 150 = |
| Storage Temperature (Tstg) | -55 to +150 °C |
The device has an allowable power dissipation of 1.5 W.
The storage temperature ranges from -55 to +150 °C.
The drain current for pulses can reach up to 10 A.