This document is a technical datasheet for the SANYO 2SJ231, a P-Channel MOS Silicon FET designed for very high-speed switching applications. It provides key features such as small ON resistance and low-voltage drive capabilities.
The text includes absolute maximum ratings (e.g., Drain to Source Voltage of -100V) and electrical characteristics at 25°C, covering parameters like breakdown voltage, leakage currents, capacitance, and switching times. Graphs illustrate performance regarding drain current versus gate-source voltage and allowable power dissipation against ambient temperature.
The maximum allowable power dissipation is 1 W.
The channel temperature must be between -55°C and +150°C.