This document is a technical datasheet for the Sanyo 2SJ272, a P-Channel MOS Silicon Field Effect Transistor (FET). It highlights features such as low ON resistance, very high-speed switching capabilities, and suitability for low-voltage drive applications. The device comes in a micaless package designed to facilitate mounting.
| Drain to Source Voltage (Vdss) | -100 V |
|---|---|
| Gate to Source Voltage (Vgss) | ±15 V |
| Drain Current (DC) (Id) | -4 A |
| Allowable Power Dissipation (Pd) | 2.0 W |
| Channel Temperature (Tc) | 150 °C |
| Static Drain to Source Resistance (Rdson) | 0.3 - 0.4 Ω |
| Input Capacitance (Ciss) | 950 pF |
The device has an allowable power dissipation of 2.0 W at a channel temperature of 150 °C.
The device supports a peak pulse drain current of 16 A when the pulse width is 10 µs and the duty cycle is 1%.
The absolute maximum ratings are a drain-to-source voltage of 100 V and a gate-to-source voltage of 15 V.