This document is a technical datasheet for the SANYO 2SJ228, a P-Channel MOS Silicon FET designed for very high-speed switching applications. Key features include small on-resistance, low-voltage drive capability, and compliance with radial taping standards.
The datasheet provides absolute maximum ratings such as a drain-to-source voltage of -60V and an allowable power dissipation of 1W. It also lists detailed electrical characteristics including breakdown voltages, capacitance values (Ciss, Coss, Crss), and switching times at specific test conditions.
| Drain to Source Voltage (Vdss) | -60 V |
|---|---|
| Gate to Source Voltage (Vgss) | -15 V |
| Drain Current (DC) (Id) | -0.8 A |
| Allowable Power Dissipation (Pd) | 1 W |
| Channel Temperature (Tch) | -55 to +150 °C |
| Input Capacitance (Ciss) | 160 pF |
| Output Capacitance (Coss) | 60 pF |
The device features very high-speed switching with a turn-on delay time of 4 ns and a rise time of 12 ns.
The allowable channel temperature ranges from -55°C to +150°C.