This document is a technical datasheet for the SANYO 2SJ266, a P-Channel MOSFET designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and a surface mount package that reduces manufacturing processes.
The datasheet provides absolute maximum ratings such as a drain-to-source voltage of -60V and a cutoff voltage ranging from -1.0 to -2.0V. It also lists detailed electrical characteristics including input/output capacitance, switching times (turn-ON delay up to 15ns), and thermal resistance data.
| Drain to Source Voltage (Vdss) | -60 V |
|---|---|
| Gate to Source Voltage (Vgss) | +/- 15 V |
| Drain Current (DC) (Id) | -8 A |
| Allowable Power Dissipation (Pd) | 1.65 W |
| Channel Temperature (Tc) | 150°C |
| Input Capacitance (Ciss) | 950 pF |
| Turn-ON Delay Time (td(on)) | 15 ns |
The device has an allowable power dissipation of 1.65 W when the channel temperature is 25°C.
The absolute maximum rating for drain-to-source voltage is -60 V, and for gate-to-source voltage it is ±15 V.
The input capacitance is 950 pF, output capacitance is 300 pF, and reverse transfer capacitance is 15 pF.