This document is a technical datasheet for the SANYO 2SJ226, a P-Channel MOS Silicon Field Effect Transistor designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive requirements, and a compact height of 9.5mm compatible with radial taping.
The document provides absolute maximum ratings such as a Drain to Source Voltage of -30V and an Allowable Power Dissipation of 15W. It also lists detailed electrical characteristics including breakdown voltages, cutoff voltage, forward transfer admittance, and switching times like Turn-ON Delay Time (t_d(on)) and Fall Time (t_f).
| Product Type | P-Channel MOS Silicon FET |
|---|---|
| Drain to Source Voltage (V_DSS) | -30 V |
| Gate to Source Voltage (V_GSS) | -15 V |
| Drain Current (DC) (I_D) | -2 A |
| Allowable Power Dissipation (P_D) | 15 W |
| Channel Temperature (T_C) | -55 to +150 °C |
| Height onboard | 9.5mm |
The device allows a maximum power dissipation of 15 W.
Its height onboard is 9.5mm.
The cutoff voltage ranges from a minimum of -1.0 V to a maximum of -2.0 V.