This document provides technical specifications for the SANYO 2SJ263, a P-Channel MOS Silicon Field Effect Transistor designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive requirements, and a micaless package to facilitate mounting.
The datasheet lists absolute maximum ratings such as a drain-to-source voltage of -60V and a drain current of -6A (DC). It also includes electrical characteristics like input capacitance and switching times, along with graphical representations of power dissipation versus temperature.
| Drain to Source Voltage (Vdss) | -60 V |
|---|---|
| Gate to Source Voltage (Vgss) | ±15 V |
| Drain Current (DC) (Id) | -6 A |
| Allowable Power Dissipation (Pd) | 20 W |
| Channel Temperature (Tc) | 150 °C |
| Input Capacitance (Ciss) | 950 pF |
The device has an allowable power dissipation of 20 W at a channel temperature of 150 °C.
The device supports a peak drain current of 24 A when pulsed with a duty cycle of 1%.
The absolute maximum gate-to-source voltage is limited to 15 V.