This document is a technical datasheet for the Sanyo 2SJ267, a P-Channel MOS Silicon Field Effect Transistor (FET) designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and a surface mount type package that reduces assembly time.
The document provides absolute maximum ratings such as a drain-to-source voltage of -60V and a storage temperature range of -55°C to +150°C. It also lists specific electrical characteristics including breakdown voltages, leakage currents, capacitance values (Ciss, Coss, Crss), and switching times like turn-on delay and rise time.
| Drain-to-Source Voltage (Vpss) | -60 V |
|---|---|
| Gate-to-Source Voltage (Voss) | +20 V |
| Drain Current (DC) (Ip) | -10 A |
| Allowable Power Dissipation (Pp) | 165 W |
| Channel Temperature (Teh) | 150 °C |
| Input Capacitance (Ciss) | 1230 pF |
| Turn-ON Delay Time (taton) | 4 ns |
The absolute maximum rating for allowable power dissipation (Pd) is 165 W.
The device can be stored between -55°C and +150°C.
The device supports a pulse drain current of 40 A with a duty cycle of 1%.