This document is a technical datasheet for the SANYO 2SJ225, a P-Channel MOS Silicon FET designed for very high-speed switching applications. Key features include small ON resistance, low-voltage drive capability, and compliance with radial taping standards.
The datasheet provides absolute maximum ratings such as a drain-to-source voltage of -30V and an allowable power dissipation of 1W. It also lists detailed electrical characteristics including breakdown voltages, capacitances (Ciss, Coss, Crss), and switching times at specific test conditions.
| Drain to Source Voltage (Voss) | -30 V |
|---|---|
| Allowable Power Dissipation (Pp) | 1 W |
| Channel Temperature (Tch) | 150 °C |
| Input Capacitance (Ciss) | 170 pF |
| Turn-ON Delay Time (taton) | 10 ns |
The allowable power dissipation is rated at 1 W.
Switching times were measured with a drain current of -500mA, a Vps of -15V, and a Vgs of -10V.
The device can be stored between -55°C and +150°C.