This document is a technical datasheet for the SANYO 2SJ229, a P-Channel MOS Silicon FET designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and a compact height of 9.5mm suitable for onboard mounting.
| Drain to Source Voltage (Vpss) | -60 V |
|---|---|
| Gate to Source Voltage (Vass) | ±15 V |
| Drain Current (DC) (Ip) | -1.6 A |
| Allowable Power Dissipation (Pp) | 1.5 W |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
The device has an allowable power dissipation of 1.5 W.
Its height onboard is 9.5mm.
The storage temperature ranges from -55 to +150 °C.