This document is a technical datasheet for the Hitachi 2SJ174, a Silicon P-Channel MOS FET designed as a high-speed power switch. Key features include low on-resistance, suitability for motor drives and DC-DC converters, and a gate drive device capability of 4V.
| Drain-Source Voltage (Vdss) | 60 V |
|---|---|
| Gate-Source Voltage (Vgss) | +20 V |
| Drain Current (Id) | -30 A |
| Channel Dissipation | 6 W |
| Package Type | (JEDEC TO-220AB) |
The absolute maximum rating for the drain current is 30 A.
The channel temperature must not exceed 150 °C.
A gate drive of at least -4 V is required for operation.