This document is a technical datasheet for the Hitachi 2SJ177 Silicon P-Channel MOS FET. It highlights key features such as low on-resistance, high-speed switching capabilities, and suitability for motor drives and DC-DC converters.
The datasheet provides comprehensive electrical specifications including absolute maximum ratings like a drain-source voltage of -60V and a continuous drain current of 20A. It also lists specific electrical characteristics at Ta=25°C, such as input capacitance, output capacitance, and various timing parameters for turn-on and turn-off delays.
| Gate-Source Voltage (Vgss) | -40 V |
|---|---|
| Drain Current (Id) | 20 A |
| Channel Dissipation (Pd) | 35 W |
| Input Capacitance (Ciss) | 90 pF |
| Output Capacitance (Coss) | 265 pF |
| Turn-on Delay Time (td) | 5 ns |