This document is a technical datasheet for the Hitachi 2SJ176, a Silicon P Channel MOS FET designed for high-speed power switching applications. Key features include low on-resistance, high speed switching, and suitability for motor drives, DC-DC converters, and solenoid drives.
The datasheet provides absolute maximum ratings such as a drain-source voltage of -60V and a continuous drain current of 18A. It also lists electrical characteristics including input capacitance, output capacitance, reverse transfer capacitance, and various timing parameters like turn-on delay time and rise time.
| Drain-Source Voltage (Vdss) | -60 V |
|---|---|
| Gate-Source Voltage (Vgss) | +20 V |
| Drain Current (Id) | -18 A |
| Channel Dissipation (Pd) | 30 W |
| Storage Temperature Range | -55 ~ +150 °C |
| Input Capacitance (Ciss) | 70 pF |
| Output Capacitance (Coss) | 25 pF |
| Reverse Transfer Capacitance (Crss) | 2 pF |
It is suitable for motor drive, DC-DC converter, power switch and solenoid drive.
Yes, it is a 4¥V Gate Drive Device that can be driven from a 5 V source.
The maximum channel temperature (Tc) is 150 °C.