2SJ175 is a Silicon P-Channel MOS FET. It features low on-resistance, high switching speed, low drive current, suitable for motor drive, DC-DC converter, power switch and solenoid drive.
This document is a technical datasheet for the Hitachi 2SJ175, a Silicon P-Channel MOS Field Effect Transistor (FET). The device is designed for high-speed power switching applications such as motor drives, DC-DC converters, power switches, and solenoid drives. It features low on-resistance, high speed switching, and low drive current requirements.
| Drain to source voltage (Voss) | -60 V |
|---|---|
| Gate to source voltage (Vgs) | +20 V |
| Drain current | -10 A |
| Channel dissipation (Poh) | 25 W |
| Channel temperature (Tch) | 150 °C |
| Static drain to source on state resistance (Vgs = -4 V) | 0.25 Ω |
| Input capacitance (Ciss) | 900 pF |
The typical resistance is 0.13 ohms at -5 A and -10 V, or 0.18 ohms at -5 A and +4 V.