This document is a technical datasheet for the Toshiba 2SK211, an N-channel silicon junction type field-effect transistor (FET). It provides specific application contexts such as FM tuner amplifiers and VHF band amplifier applications. The device features a typical noise figure of 2.5dB at 100MHz and extremely low reverse transfer capacitance.
| Gate Current (Ig) | 10 mA |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Noise Figure (NF) | 2.5 dB (Typ.) |
| Reverse Transfer Capacitance (Crss) | 0.1 pF (Typ.) |
| Forward Transfer Admittance (Yfs) | 9 mS (Typ.) |
The maximum rated junction temperature is 125 °C.
The maximum drain power dissipation is 150 mW.
The typical noise figure is 2.5 dB.