1SV322 is a TCXO/VCO diode from Toshiba with a high capacitance ratio (C1 V/C4 V = 4.3, typical) and low series resistance (rs = 0.4 ohms, typical), useful for small size tuners.
This document is a technical datasheet for the Toshiba 1SV322, a Silicon Epitaxial Planar Type diode. It specifies that the device features a high capacitance ratio (C1v/C4v = 4.3 typical) and low series resistance (rs = 0.4 Ohm typical), making it useful for small size tuners.
The datasheet provides maximum ratings including a reverse voltage of 10V, a junction temperature of 125°C, and a storage temperature range of -55 to 125°C. It also lists electrical characteristics such as reverse current (3 nA max at 10V) and capacitance values at specific test conditions.
| Reverse voltage (VR) | 10 V |
|---|---|
| Junction temperature (Tj) | 125 °C |
| Storage temperature range (Tstg) | -55~125 °C |
| Reverse current (IR) at 10V | 3 nA max |
| Capacitance C1v at 1V | 26.5 pF min, 29.5 pF max |
| Series resistance (rs) at 4V | 0.4 Ohm typ, 0.8 Ohm max |
The typical capacitance ratio is 4.3.
Yes, it is useful for small size tuners due to its low series resistance and high capacitance ratio.