The 1SV323 is a semiconductor diode produced by Toshiba. It has a high capacitance ratio and low series resistance, making it suitable for small tuners.
This document is a technical datasheet for the TOSHIBA 1SV323, a Silicon Epitaxial Planar Type diode. It provides specific electrical parameters such as reverse voltage, capacitance ratios, and series resistance under standard test conditions.
The datasheet also includes maximum operating ratings, including junction temperature limits of 125°C and storage temperatures from -55°C to 125°C. Additionally, it outlines restrictions on product use, advising that the component is intended for general electronics applications rather than safety-critical or high-reliability systems like medical instruments.
| Reverse Voltage (VR) | 10 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Ratio (Ci/Cay) | 4.0 to 43 |
| Series Resistance (rs) | 0.4 to 0.8 Ω |
| Weight | 0.0014 g (typ.) |
The typical capacitance ratio (Ci/Cay) is 4.3.
The maximum rated reverse voltage is 10V.