This document is a technical datasheet for the Toshiba 2SC3112, a Silicon NPN Epitaxial Type (PCT Process) transistor. It is specifically designed for use in audio amplifiers and switching applications.
The datasheet provides maximum ratings such as a collector-base voltage of 50V and a collector current of 150mA. Key electrical characteristics include a DC current gain ranging from 600 to 3600, a transition frequency up to 250 MHz, and a junction temperature limit of 125°C.
| Device Type | Silicon NPN Epitaxial Type (PCT Process) |
|---|---|
| Applications | Audio Amplifier and Switching Applications |
| Collector-Base Voltage (VCBO) | 50 V |
| Collector-Emitter Voltage (VCEO) | 50 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (Ic) | 150 mA (Max.) |
| Base Current (Ip) | 30 mA |
| Collector Power Dissipation (Po) | 400 mW |
| Junction Temperature (Tj) | 125 °C |
| DC Current Gain (hFE) Min. | 600 |
| Transition Frequency (fp) | 100 MHz (Min.) |
The device is designed for audio amplifier and switching applications.
The maximum collector current (Ic) is 150 mA.
The minimum DC current gain for Classification A is 600.