This document is a technical datasheet for the TOSHIBA 1SV310, a silicon epitaxial planar type diode designed for use in UHF band radios. The device features a high capacitance ratio of 2.1 (typical) and low series resistance of 0.28 Ohms (typical), making it suitable for small size tuners.
| Reverse Voltage (VR) | 10 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Ratio (Cyy/Cay) | 2.1 (Typ.) |
| Series Resistance (Tg) | 0.280 Ohms (Typ.) |
The device has a maximum reverse voltage rating of 10 V.
The typical capacitance ratio is 2.1.
The maximum junction temperature is 125 °C.