This document is a technical datasheet for the Toshiba 1SV276, a silicon epitaxial planar type variable capacitance diode designed for UHF band radio applications. The device features a high capacitance ratio of approximately 2.0 and low series resistance.
The datasheet provides maximum ratings including a reverse voltage of 10V and a junction temperature of 125°C. It also lists specific electrical characteristics such as capacitance values at various reverse voltages (1V, 4V) and frequencies (1MHz, 470MHz), along with typical series resistance.
| Reverse Voltage (VR) | 10 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Ratio (Ciy/Cay) | Typ. 2.0 |
| Series Resistance (rg) | Typ. 0.22 Ω |
The maximum reverse voltage rating is 10 V.
The typical capacitance ratio (Cyy/C4ay) is 2.0.
The maximum junction temperature is 125 °C.