Toshiba 1SV313k Silicon Epitaxial Planar Type Datasheet


Toshiba 1SV313k Silicon Epitaxial Planar Type Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
77 KB
Published
07 June, 2012
Updated
07 June, 2012
MD5 checksum
33B2EB3664BB84F7CD55ABADD7780A28

About this manual

This document is a technical datasheet for the TOSHIBA 1SV313k, a silicon epitaxial planar type varactor diode designed as a Voltage Controlled Oscillator (VCO) for UHF band radio applications. Key features highlighted include a high capacitance ratio of approximately 2.5 and low series resistance.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Marking
  • Capacitance vs Reverse Voltage
  • Series Resistance vs Reverse Voltage

Specifications

Reverse Voltage (VR)10 V
Junction Temperature (Tj)125 °C
Storage Temperature Range (Tstg)-55~125 °C
Capacitance Ratio (Co5v/Co5y)2.5 (Typ.)
Series Resistance (Tg)0.35 Ω (Typ.)

Frequently asked questions

What is the maximum junction temperature for this diode?

The maximum rated junction temperature is 125 °C.

What is the typical capacitance ratio between Co5v and Co5y?

The typical capacitance ratio is 2.5.

At what frequency is the series resistance measured?

The series resistance is measured at a frequency of 470 MHz.

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