This document is a technical datasheet for the Toshiba 1SV314, a Silicon Epitaxial Planar Type diode designed for use in VCOs within UHF band radio units. The device features a high capacitance ratio of approximately 2.5 and low series resistance.
| Reverse Voltage (VR) | 10 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Co5v (VR=0V, f=1MHz) | 7.3 - 8.4 pF |
| Series Resistance (Tg) | 0.35 Ω |
The maximum reverse voltage is rated at 10 V.
The typical capacitance ratio is 2.5.
The maximum junction temperature is 125 °C.