Toshiba 1SV31248 AUS RF Attenuator Datasheet


Toshiba 1SV31248 AUS RF Attenuator Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
1
File format
PDF
File size
64 KB
Published
07 June, 2012
Updated
07 June, 2012
MD5 checksum
D827F36D105F7D8CF2316BF677E501EF

About this manual

The document describes the Toshiba 1SV31248 AUS, which consists of two independent diodes mounted in a 4-pin ultra-compact package suitable for high-density circuit design. Key features include low capacitance (Typ. 0.25pF) and low series resistance (Typ. 8Ω).

What's inside

  • Applications
  • Maximum Ratings
  • Electrical Characteristics
  • Marking
  • Package Dimensions

Specifications

Reverse Voltage50 V
Forward Current50 mA
Junction Temperature125 °C
Storage Temperature Range-55~125 °C
Total Capacitance (Typ.)0.25 pF
Series Resistance (Typ.)8 Ω

Frequently asked questions

What type of diode is the Toshiba 1SV31248 AUS?

It is a silicon epitaxial PIN type diode.

What is the maximum reverse voltage rating for this device?

The maximum reverse voltage is 50 V.

What is the typical forward current capacity of the diode?

The typical forward current rating is 50 mA.

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