This document is a technical datasheet for the Toshiba 18V270 (also referenced as 1SV270), which is a silicon epitaxial planar type variable capacitance diode designed for UHF band radio applications. The device features a high capacitance ratio and low series resistance, packaged in a small form factor.
| Reverse Voltage (VR) | 10 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance at 1V (Cc1v) | 15 to 17 pF |
| Capacitance at 4V (C4V) | 7.3 to 8.7 pF |
| Capacitance Ratio (C1V/C4V) | Typ. 2.0 |
| Series Resistance (rs) | Typ. 0.28 Ohm |
The maximum reverse voltage rating is 10 V.
The typical capacitance ratio C1V/C4V is 2.0.
The maximum junction temperature is 125 °C.