This document is a technical datasheet for the TOSHIBA 1SV311, a silicon epitaxial planar type VCO (Voltage Controlled Oscillator) diode designed for use in UHF band radios. The device features a high capacitance ratio of approximately 2.1 and low series resistance.
| Product Type | Silicon Epitaxial Planar Type VCO for UHF Band Radio |
|---|---|
| Capacitance Ratio (Typ.) | 2.1 |
| Series Resistance (Typ.) | 0.280 |
| Reverse Voltage Rating | 10 V |
| Junction Temperature Max. | 125 °C |
| Storage Temperature Range | -55~125 °C |
The typical capacitance ratio (Ciy/Cay) is 2.1.
The maximum junction temperature rating is 125 °C.