This document is a technical datasheet for the Toshiba 18V277, a silicon epitaxial planar type variable capacitance diode designed for use in VCOs within UHF band radio applications. The device features a high capacitance ratio of approximately 2.3 and low series resistance.
The document provides maximum ratings including a reverse voltage of 10V and a junction temperature of 125°C. It also lists specific electrical characteristics such as capacitance values at various voltages, the capacitance ratio, and series resistance under specified test conditions.
| Reverse Voltage (VR) | 10 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Ciy (VR=1V, f=1MHz) | 4.0 4.5 4.9 pF |
| Capacitance Cav (VR=4V, f=1MHz) | 1.85 2.0 | 2.35 pF |
| Series Resistance rg (VR=1V, f=470MHz) | 0.42 | 0.55 Ω |
The high capacitance ratio Cyy/Cay is typically 2.3.
The maximum reverse voltage rating is 10 V.
The typical capacitance ratio (Cyy/C4ay) is 2.3.
The maximum junction temperature is 125 °C.