This document is a technical datasheet for the TOSHIBA 1SV279K, a silicon epitaxial planar type variable capacitance diode designed for V/UHF band radio units. The device features a high capacitance ratio of approximately 2.5 and low series resistance.
The datasheet provides maximum ratings including a reverse voltage of 15V and a junction temperature of 125°C, along with detailed electrical characteristics such as capacitance values at specific voltages and frequencies, and reverse current specifications.
| Product Type | Variable Capacitance Diode |
|---|---|
| Reverse Voltage VR | 15 V |
| Junction Temperature Tj | 125 °C |
| Storage Temperature Range Tstg | -55~125 °C |
| Capacitance Coy (VR=2V) | 14 - 16 pF |
| Series Resistance Ig (VR=5V) | 0.2 0.4 Q |
The high capacitance ratio (Coy / Ciov) is typically 2.5.
The low series resistance (rg) is typically 0.20 Ω.