This document is a technical datasheet for the Toshiba 1SV285, a silicon epitaxial planar type variable capacitance diode designed for use in VCOs within the UHF band. The device features a high capacitance ratio of approximately 2.3 and low series resistance.
| Reverse Voltage (VR) | 10 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Ratio (Ciy/Cay) | 2.0 to 2.38 |
| Series Resistance (Ig) | 0.42 to 0.55 Ω |
The device has a maximum reverse voltage rating of 10 V.
The typical capacitance ratio is 2.3.
The maximum series resistance is 0.55 Ω.