This document is a technical datasheet for the TOSHIBA 1SV281, a silicon epitaxial planar type variable capacitance diode designed for V/UHF band radio units. The device features a high capacitance ratio of approximately 2.0 and low series resistance.
The datasheet provides maximum ratings including a reverse voltage of 10V and a junction temperature of 125°C. It also lists detailed electrical characteristics such as capacitance values at specific voltages (15-17 pF at 1V, 7.8-8.7 pF at 4V) and series resistance.
| Product Type | Variable Capacitance Diode |
|---|---|
| Reverse Voltage (VR) | 10 V |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance (Civ) at VR=1V, f=1MHz | 15 - 17 pF |
| Capacitance (Cav) at VR=4V, f=1MHz | 7.8 —_ 8.7 pF |
| Series Resistance (Ig) at VR=1V, f=470MHz | 0.28 0.5 Q |
The typical capacitance ratio (Ciy/Cay) is 2.0.
It is useful for small size tuners in V/UHF band radio units.