This document is a datasheet for the Toshiba 1SV284, a silicon epitaxial planar type variable capacitance diode designed for V/UHF band radio units. The device features a high capacitance ratio of approximately 2.0 and low series resistance, making it suitable for small size tuners.
The datasheet provides maximum ratings including a reverse voltage of 10V and a junction temperature of 125°C. Electrical characteristics specify capacitance values ranging from 7.0 pF to 17 pF depending on the applied reverse voltage.
| Reverse Voltage | 10 V |
|---|---|
| Junction Temperature | 125 °C |
| Storage Temperature Range | -55~125 °C |
| Capacitance Ciy (VR=1V) | 15 - 17 pF |
| Capacitance Cav (VR=4V) | 7.0 — 8.5 pF |
| Series Resistance Ig (VR=1V) | 0.22 0.4 Q |
The high capacitance ratio Cyy/C4ay is typically 2.0.
The low series resistance rg is typically 0.220 Ω.