Toshiba 1SV232 Variable Capacitance Diode Datasheet


Toshiba 1SV232 Variable Capacitance Diode Datasheet - cover page
Brand
Toshiba
Category
Chips
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
110 KB
Published
07 June, 2012
Updated
29 June, 2012
MD5 checksum
041DE99680D693B3E35307E944F96E42

About this manual

This document is a technical datasheet for the TOSHIBA 1SV232, a silicon epitaxial planar type variable capacitance diode. The device is designed for applications such as CATV tuning due to its excellent C-V characteristics and small tracking error.

The datasheet provides maximum ratings including a reverse voltage of 30 V and a junction temperature of 125 °C. It also lists detailed electrical characteristics, specifying capacitance values at various voltages and frequencies, along with series resistance.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Capacitance vs Reverse Voltage
  • Reverse Current vs Reverse Voltage
  • Series Resistance vs Frequency
  • Temperature Characteristics

Specifications

Reverse Voltage (VR)30 V
Junction Temperature (Tj)125 °C
Storage Temperature Range (Tstg)-55~125 °C
Capacitance Ratio (Coy / Cosy)10.5 (Typ.)
Series Resistance (Rg)0.70 Ω Max.

Frequently asked questions

What is the maximum reverse voltage rating for this diode?

The maximum reverse voltage rating is 30 V.

What is the typical capacitance ratio of the device?

The typical capacitance ratio is 10.5.

What is the maximum junction temperature for this component?

The maximum junction temperature is 125 °C.

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