This document is a technical datasheet for the TOSHIBA 1SV286, a silicon epitaxial planar type variable capacitance diode designed for use in CATV converter tuning units. The device features a high capacitance ratio of approximately 8.9 and low series resistance.
The datasheet provides maximum ratings including a reverse voltage of 30 V and a junction temperature of 125 °C. It also lists detailed electrical characteristics such as reverse current, capacitance at various voltages (CoV and Coov), capacitance ratio, and series resistance under specific test conditions.
| Product Type | Variable Capacitance Diode, Silicon Epitaxial Planar Type |
|---|---|
| Reverse Voltage (VR) | 30 V |
| Peak Reverse Voltage (VRM) | 85 V |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55 ~ 125 °C |
| Weight | 0.0014 g |
| Capacitance Ratio (Typical) | 8.9 |
| Series Resistance (Typical) | 0.73 Ω |
The typical capacitance ratio (Cov / Coov) is 8.9.
The maximum rated reverse voltage is 30 V.