The document describes the Toshiba 1SV287, a silicon epitaxial planar type variable capacitance diode designed for UHF and SHF tuning units. Key features include a high capacitance ratio of approximately 7.6 and low series resistance of about 1.90 ohms.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Peak Reverse Voltage (VRM) | 85 V |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Co (VR=2V) | 4.2 ~ 5.7 pF |
| Capacitance C0s (VR=25V) | 0.538 ~ 0.68 pF |
| Series Resistance (Rg) | 1.9 ~ 2.3 ohm |
The typical capacitance ratio (Co/Co5y) is 7.6.
The maximum rated junction temperature is 125 °C.