This document is a technical datasheet for the Toshiba 1SV231, a silicon epitaxial planar type variable capacitance diode designed for CATV tuning applications. The device features an excellent C-V characteristic with a high capacitance ratio of approximately 15:1.
The datasheet provides maximum ratings including a reverse voltage of 30V and a junction temperature of 125°C. It also lists specific electrical characteristics such as reverse current, capacitance values at various voltages (41-49.5 pF typical), and series resistance.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance (Cov) at 2V | 41.0 ~ 49.5 pF |
| Capacitance (Copy) at 25V | 2.7 ~ 3.4 pF |
| Capacitance Ratio (Cov / Cosy) | Typ. 15 |
The high capacitance ratio is typically 15, calculated as Cov/Cosy.
The maximum rated junction temperature is 125°C.