Toshiba 1SV262 Variable Capacitance Diode Datasheet


Toshiba 1SV262 Variable Capacitance Diode Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
109 KB
Published
07 June, 2012
Updated
27 July, 2012
MD5 checksum
C8E9854EC8703833D02D832FA6A96FBF

About this manual

This document is a technical datasheet for the TOSHIBA 1SV262, a silicon epitaxial planar type variable capacitance diode. It is designed primarily for CATV tuning applications.

The datasheet provides detailed specifications including maximum ratings such as reverse voltage and junction temperature, along with electrical characteristics like capacitance at various voltages and series resistance.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Capacitance Ratio
  • Series Resistance
  • Reverse Current
  • Marking
  • Safety Precautions

Specifications

Reverse Voltage (VR)34 V
Peak Reverse Voltage (VRM)36 V
Junction Temperature (Tj)125 °C
Storage Temperature Range (Tstg)-55~125 °C
Capacitance at 2V (Typ.)35.5 pF
Capacitance at 25V (Typ.)2.85 pF
Series Resistance (Typ.)0.6 Ω

Frequently asked questions

What is the capacitance ratio of the 1SV262?

The typical capacitance ratio C2V/C25V is 12.5.

What is the maximum junction temperature?

The maximum rated junction temperature is 125 °C.

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