This document is a technical datasheet for the TOSHIBA 18V245, a silicon epitaxial planar type variable capacitance diode designed for UHF and SHF tuning applications. The device features a high capacitance ratio of approximately 5.7 (C2V/C25V) and low series resistance.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Capacitance at 2V (C2V) | 3.31 pF to 4.55 pF |
| Capacitance at 25V (C25V) | 0.61 pF to 0.77 pF |
| Capacitance Ratio (C2V/C25V) | Typical 5.7 |
The typical capacitance ratio between 2V and 25V reverse bias is 5.7.
The maximum rated junction temperature for this device is 125 °C.