This document is a technical datasheet for the Toshiba 1SV237, a silicon epitaxial PIN type diode designed for use in VHF and UHF band RF attenuators. The device features two cathodes and two anodes, allowing for specific circuit configurations required for attenuation applications.
The datasheet provides maximum ratings including a reverse voltage of 50V and a forward current of 50mA, with a junction temperature limit of 125°C. It also lists key electrical characteristics such as reverse current, forward voltage, total capacitance, and series resistance under specific test conditions.
| Reverse Voltage (VR) | 50 V |
|---|---|
| Forward Current (Ip) | 50 mA |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Reverse Current (IR) | 0.1 nA |
| Forward Voltage (VF) | 0.95 V |
The maximum reverse voltage rating is 50 V.
The typical forward voltage is 0.95 V when the forward current is 50 mA.
The maximum total capacitance is 0.25 pF under those test conditions.