This document is a technical datasheet for the TOSHIBA 1SV242, a silicon epitaxial planar type variable capacitance diode designed for TV VHF wide band tuning applications. The device features a high capacitance ratio of approximately 14.5 and low series resistance.
The datasheet provides maximum ratings including a reverse voltage of 30V and a junction temperature of 125°C. It also lists detailed electrical characteristics such as reverse current, capacitance at various voltages (C1V/C28V), and series resistance under specific test conditions.
| Product Type | Variable Capacitance Diode, Silicon Epitaxial Planar Type |
|---|---|
| Reverse Voltage (VR) | 30 V |
| Peak Reverse Voltage (VRM) | 35 V |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Ratio (C1V/C28V) | 14.5 (Typ.) |
| Series Resistance (Tg) | 0.65 Ω (Typ.) |
The typical capacitance ratio between C1V and C28V is 14.5.
The maximum rated junction temperature is 125 °C.